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俄亥俄州立大学哥伦布分校物理系Prof. Paul Raymond Berger3月15日来校讲学


应机电工程学院的邀请,俄亥俄州立大学哥伦布分校物理系Prof. Paul Raymond Berger将于315日来js金沙所有网址讲学,欢迎全校师生踊跃参加。学术报告具体安排如下:
  学术报告题目:Negative Differential Resistance Devices for Quantum Functional Circuitry
  内容摘要:Quantum functional circuitry exploiting negative differential resistance (NDR) devices offers a paradigm shift in computational architectures for a multitude of circuitries (low-power embedded memory, mixed-signal and logic), that enables continued Si/SiGe scaling according to Moore’s Law. The advantage of quantum functional circuits is illustrated by the N-shaped electrical characteristics of two serially connected NDR devices which can be exploited to easily fashion two stable latching points. The requirement of an NDR device for these circuit topologies is room temperature NDR operation with a reasonably high peak-to-valley current ratio (PVCR) [≥ 3]. NDR-based circuitry facilitates simple circuit topologies to fashion latches etc., permitting tunnel diode/transistor circuits that require fewer devices, less chip area and reduced power consumption. Already, preliminary work has demonstrated tunnel diode static random access memory (TSRAM) that operates below 0.5 volts and only requires a 0.3 voltage swing! TSRAM is DRAM-like in its configuration and chip area footprint, but it is refresh-free, thus providing greater benefits beyond low-voltage operation. Multi-level logic circuits are also readily enabled, and provide further opportunities.

We will present results on room temperature NDR devices and circuits using a Si-based resonant interband tunnel diode (RITD) developed by this team is a that is a hybrid NDR device that uses quantum wells formed by delta-doping and appropriate band offsets to facilitate robust tunneling across a p-n junction. This will illustrate this pathway, and then this will be extended to conjugated polymer based devices that are in their initial investigations.

The polymer device to be presented leverages the unique flexible and solution-processable properties of conjugated polymer semiconductors. We will demonstrate robust room temperature negative differential resistance and logic circuit operations using polymer tunnel diodes (ITO/TiO2/MEH-PPV/Al), suitable for SmartCard topologies.

人:Prof. Paul Raymond Berger
  时 间:2012315日(周四)下午1500
  地 点:金鸡岭校区F3

概况: Paul R. Berger is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is the Founder of the Nanoscale Patterning Laboratory. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Berger has worked on Si/SiGe nanoelectronic devices and fabrication processes; conjugated polymer-based optoelectronic and electronic devices; and semiconductor materials, fabrication and epitaxial growth. He worked at Bell Laboratories, Murray Hill, NJ and the University of Delaware. Extended visits included the Max-Planck Institute for Polymer Research in Mainz, Cambridge Display Technology, and IMEC in Leuven, Belgium. He received NSF’s CAREER award, a DARPA Sustained Excellence Award, and OSU’s Lumley Research Award and Diversity Excellence Award. He co-organized and served on numerous conferences, including the IEDM. He has authored >90 articles, 5 book sections and been issued 14 patents with 6 more pending. He is a fellow and distinguished lecturer of IEEE and a senior member of OSA.


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